BCX5316E6327HTSA1
TRANS PNP 80V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies PNP Bipolar Junction Transistor, part number BCX5316E6327HTSA1. This component features an 80V collector-emitter breakdown voltage and a maximum collector current of 1A. It offers a minimum DC current gain (hFE) of 100 at 150mA and 2V, with a transition frequency of 125MHz. The device is rated for a maximum power dissipation of 2W and operates at temperatures up to 150°C. The transistor is housed in a PG-SOT89 package, suitable for surface mounting. Saturation characteristics are specified at 500mV maximum for Vce(sat) at 50mA base current and 500mA collector current. Collector cutoff current (ICBO) is a maximum of 100nA. This component is commonly utilized in industrial automation, consumer electronics, and automotive applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |