BCX5310E6327HTSA1
TRANS PNP 80V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX5310E6327HTSA1 is a PNP bipolar junction transistor designed for demanding applications. This component features a breakdown voltage of 80 V and a continuous collector current capability of 1 A. With a transition frequency of 125 MHz and a maximum power dissipation of 2 W, it is suitable for use in power management and signal amplification circuits. The minimum DC current gain (hFE) is specified at 63 at 150mA and 2V. Saturation voltage is a maximum of 500mV at 50mA and 500mA. The device operates within a temperature range of 150°C (TJ) and is supplied in a PG-SOT89 package, suitable for surface mounting. This transistor finds application in industries such as industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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