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BCX52E6327HTSA1

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BCX52E6327HTSA1

TRANS PNP 60V 1A SOT89

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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Infineon Technologies' BCX52E6327HTSA1 is a PNP bipolar junction transistor designed for general purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. With a power dissipation of 2W and a transition frequency of 125MHz, it is suitable for demanding circuit designs. The transistor exhibits a minimum DC current gain (hFE) of 40 at 150mA and 2V. Its saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA base current and 500mA collector current. The component operates within a temperature range of -55°C to 150°C (TJ). Packaged in a PG-SOT89 (TO-243AA) for surface mounting, this component is supplied in Tape & Reel (TR). Applications include power management and signal conditioning in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition125MHz
Supplier Device PackagePG-SOT89
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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