BCX5216E6433HTMA1
TRANS PNP 60V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX5216E6433HTMA1 is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 2W and a transition frequency of 125MHz, the BCX5216E6433HTMA1 is well-suited for general-purpose amplification and switching tasks. It features a minimum DC current gain (hFE) of 100 at 150mA and 2V, and a Vce saturation of 500mV at 50mA and 500mA. The device operates at temperatures up to 150°C and is supplied in a PG-SOT89 (TO-243AA) surface mount package, presented on tape and reel. Typical industries utilizing this component include automotive and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |
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