BCX5216E6327HTSA1
TRANS PNP 60V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX5216E6327HTSA1 is a PNP bipolar junction transistor designed for high-performance applications. This component features a breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of 1A. With a transition frequency (fT) of 125MHz and a maximum power dissipation of 2W, it is well-suited for power management and signal amplification circuits. The minimum DC current gain (hFE) is 100 at 150mA and 2V, and the saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA and 500mA. The device exhibits a low collector cutoff current (Icbo) of 100nA. Packaged in a PG-SOT89 (TO-243AA) for surface mounting and supplied on tape and reel, the BCX5216E6327HTSA1 operates across a temperature range of -55°C to 150°C. This transistor finds application in automotive, industrial, and consumer electronics sectors requiring robust and efficient switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |
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