BCX51E6327HTSA1
TRANS PNP 45V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX51E6327HTSA1 is a PNP bipolar junction transistor (BJT) designed for high-performance applications. This component features a collector-emitter breakdown voltage of 45 V and a maximum continuous collector current (Ic) of 1 A. With a transition frequency (fT) of 125 MHz, it is suitable for signal amplification and switching in various electronics. The device offers a minimum DC current gain (hFE) of 40 at 150 mA and 2 V. Its power dissipation is rated at 2 W, and it operates optimally within a temperature range of 150°C. The BCX51E6327HTSA1 is supplied in a PG-SOT89 package, facilitating surface mounting. It finds application in consumer electronics, industrial automation, and telecommunications sectors. The transistor exhibits a Vce(sat) of 500 mV at 50 mA and 500 mA, with a collector cutoff current (Icbo) of 100 nA. This component is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 2 W |
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