BCX5116H6327XTSA1
TRANS PNP 45V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX5116H6327XTSA1 is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 1A. It offers a transition frequency of 125MHz and a maximum power dissipation of 2W. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA collector current and 2V VCE. Its saturation voltage is specified at a maximum of 500mV with 50mA base current and 500mA collector current. The device operates within a junction temperature range of 150°C and meets AEC-Q101 qualification, making it suitable for automotive applications. It is supplied in a PG-SOT89 package, presented on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT89 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 2 W |
| Qualification | AEC-Q101 |
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