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BCW67CE6327HTSA1

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BCW67CE6327HTSA1

TRANS PNP 32V 0.8A SOT23

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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Infineon Technologies BCW67CE6327HTSA1 is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. This component features a 32V collector-emitter breakdown voltage and a maximum continuous collector current of 800mA. The transistor exhibits a high DC current gain (hFE) of at least 250 at 100mA collector current and 1V Vce. With a transition frequency of 200MHz and a maximum power dissipation of 330mW, it is suitable for operation up to 150°C. The device is packaged in a PG-SOT23 (TO-236-3, SC-59) surface-mount configuration and supplied on tape and reel. Typical applications include power management, signal switching, and control circuitry in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA, 1V
Frequency - Transition200MHz
Supplier Device PackagePG-SOT23
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max330 mW

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