BCW67BE6327HTSA1
TRANS PNP 32V 0.8A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies PNP Bipolar Junction Transistor (BJT), part number BCW67BE6327HTSA1, offers a 32V collector-emitter breakdown voltage and a maximum collector current of 800mA. This SOT-23 packaged device features a transition frequency of 200MHz and a maximum power dissipation of 330mW. It exhibits a minimum DC current gain (hFE) of 160 at 100mA and 1V collector current and collector-emitter voltage, respectively. The transistor operates at temperatures up to 150°C (TJ) and is supplied in a PG-SOT23 package. Key applications include general-purpose switching and amplification in automotive, industrial, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 330 mW |
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