BCW66KHB6327HTLA1
TRANS NPN 45V 0.8A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCW66KHB6327HTLA1 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45 V and a maximum continuous collector current of 800 mA. With a transition frequency of 170 MHz and a maximum power dissipation of 500 mW, the BCW66KHB6327HTLA1 offers a minimum DC current gain (hFE) of 250 at 100 mA collector current and 1 V Vce. The transistor operates within a temperature range of 150°C (TJ) and is supplied in a PG-SOT23 package, delivered on tape and reel. It finds application in various electronic systems, including industrial automation and consumer electronics. Key specifications include a Vce(sat) of 450 mV at 50 mA base current and 500 mA collector current, and a collector cutoff current (ICBO) of 20 nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 500 mW |
Request a Quote
Clients Also Buy
BC 850B B5003
TRANS NPN 45V 0.1A SOT23
BCV46E6327HTSA1
TRANS PNP DARL 60V 0.5A SOT23
BC 846B E6327
TRANS NPN 65V 0.1A SOT23
