BCW66KE6359HTMA1
TRANS NPN 45V 0.8A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCW66KE6359HTMA1 is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum collector current of 800mA. With a transition frequency of 170MHz and a maximum power dissipation of 500mW, it is suitable for various signal amplification and switching tasks. The transistor exhibits a minimum DC current gain (hFE) of 40 at 500mA and 1V. Its saturation voltage (Vce Sat) is specified at 450mV maximum for an Ic of 500mA and Ib of 50mA. The device operates within an extended temperature range up to 150°C and is qualified to AEC-Q101, making it appropriate for automotive applications. It is supplied in a PG-SOT23 package, presented on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 1V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | PG-SOT23 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 500 mW |
| Qualification | AEC-Q101 |
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