BCW61DE6327HTSA1
TRANS PNP 32V 0.1A SOT-23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCW61DE6327HTSA1 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 32V and a maximum continuous collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 330mW, it is suitable for applications requiring moderate speed and power handling. The minimum DC current gain (hFE) is specified at 380 at 2mA collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 550mV at 1.25mA base current and 50mA collector current. It is supplied in a PG-SOT23 package for surface mounting and operates within a temperature range of -55°C to 150°C. This component is frequently utilized in consumer electronics, industrial control systems, and telecommunications infrastructure demanding reliable discrete semiconductor performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 380 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 330 mW |
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