BCW61BE6327HTSA1
TRANS PNP 32V 0.1A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCW61BE6327HTSA1 is a PNP bipolar junction transistor designed for surface-mount applications. This component features a 32V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 250MHz and a power dissipation of 330mW. The DC current gain (hFE) is a minimum of 180 at 2mA collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 550mV at 1.25mA base current and 50mA collector current. Collector cutoff current (ICBO) is a maximum of 20nA. The operating junction temperature range extends to 150°C. Supplied in a PG-SOT23 package, this device is suitable for applications in consumer electronics and industrial control systems. The component is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 330 mW |
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