BCW61AE6327HTSA1
TRANS PNP 32V 0.1A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCW61AE6327HTSA1 is a PNP bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 32V and a continuous collector current capability of 100mA. Its transition frequency is rated at 250MHz, with a maximum power dissipation of 330mW. The minimum DC current gain (hFE) is 120 at 2mA collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 550mV at 1.25mA base current and 50mA collector current. It operates at junction temperatures up to 150°C and is supplied in a PG-SOT23 package, presented on tape and reel. This device is suitable for use in general-purpose amplification and switching circuits across various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 330 mW |
Request a Quote
Clients Also Buy
BCX71JE6327HTSA1
TRANS PNP 45V 0.1A SOT23
BCX52-16E6327
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX52H6327XTSA1
TRANS PNP 60V 1A SOT89