BCW60FNE6393HTSA1
TRANS NPN 32V 0.1A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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The Infineon Technologies BCW60FNE6393HTSA1 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage (Vce(max)) of 32V and a continuous collector current (Ic(max)) capability of 100mA. Its transition frequency (fT) is 250MHz, with a maximum power dissipation of 330mW. The DC current gain (hFE) is specified at a minimum of 380 at 2mA collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 550mV at 1.25mA base current and 50mA collector current, with a collector cutoff current (ICBO) of 20nA. Packaged in a PG-SOT23 (TO-236-3, SC-59, SOT-23-3) for tape and reel distribution, this device operates within a temperature range of -55°C to 150°C. It finds application in general-purpose switching and amplification circuits across various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 380 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 330 mW |
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