BCW60CE6327HTSA1
TRANS NPN 32V 0.1A SOT-23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCW60CE6327HTSA1 is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 32V and a maximum continuous collector current of 100mA. The transistor offers a transition frequency of 250MHz, making it suitable for various signal amplification and switching tasks. Power dissipation is rated at 330mW, with an operating junction temperature of up to 150°C. The device is supplied in a PG-SOT23 package, presented on tape and reel. Typical applications include general-purpose amplification and switching circuits in consumer electronics, industrial control, and automotive systems. Key parameters include a minimum DC current gain (hFE) of 250 at 2mA/5V and a collector cutoff current (ICBO) of 20nA. Saturation voltage (Vce) is a maximum of 550mV at 1.25mA/50mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 330 mW |
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