BCW60BE6327HTSA1
TRANS NPN 32V 0.1A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor, part number BCW60BE6327HTSA1. This device features a 32V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 330mW, it is suitable for applications requiring moderate switching speeds and current handling. The transistor exhibits a minimum DC current gain (hFE) of 180 at 2mA collector current and 5V collector-emitter voltage. The Vce(sat) is specified at a maximum of 550mV for a 1.25mA base current and 50mA collector current. It is supplied in the PG-SOT23 package, designed for surface mounting, and is available on tape and reel. This component finds utility in general-purpose amplification and switching circuits across various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 330 mW |
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