BCW 66G E6327
TRANS NPN 45V 0.8A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCW-66G-E6327 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 45 V and a continuous collector current capability of 800 mA. The device exhibits a minimum DC current gain (hFE) of 160 at 100 mA collector current and 1 V collector-emitter voltage, with a transition frequency of 170 MHz. The maximum power dissipation is rated at 330 mW. Packaged in a PG-SOT23 surface-mount package, the BCW-66G-E6327 is suitable for high-density board designs. Typical applications include consumer electronics, industrial control systems, and automotive electronics where reliable amplification and switching are critical. The device operates at temperatures up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 330 mW |
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