BCW 66F E6327
TRANS NPN 45V 0.8A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCW-66F-E6327 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 800mA. The device offers a minimum DC current gain (hFE) of 100 at 100mA and 1V, with a transition frequency of 170MHz. Power dissipation is rated at 330mW. The transistor is housed in a PG-SOT23 package and supplied on tape and reel. It is suitable for use in general-purpose amplification and switching applications across various industrial and consumer electronics sectors. Key parameters include a collector cutoff current of 20nA (ICBO) and a Vce saturation of 450mV at 50mA/500mA. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 330 mW |
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