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BCV49E6327HTSA1

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BCV49E6327HTSA1

TRANS NPN DARL 60V 0.5A SOT89

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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Infineon Technologies BCV49E6327HTSA1 is an NPN Darlington bipolar transistor designed for demanding applications. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a high DC current gain of 10000 at 100mA and 5V, coupled with a transition frequency of 150MHz, it offers efficient amplification characteristics. The transistor has a maximum power dissipation of 1W and a low saturation voltage of 1V at 100µA/100mA. Packaged in a PG-SOT89 surface mount configuration, it is supplied on tape and reel for automated assembly. This component is suitable for use in consumer electronics, industrial control, and power management systems where robust switching and amplification are required.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition150MHz
Supplier Device PackagePG-SOT89
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

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