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BCV48E6327HTSA1

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BCV48E6327HTSA1

TRANS PNP DARL 60V 0.5A SOT89

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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The Infineon Technologies BCV48E6327HTSA1 is a PNP Darlington bipolar junction transistor designed for demanding applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 500mA. It features a high DC current gain of 10000 (min) at 100mA and 5V, and a transition frequency of 200MHz. The transistor has a maximum power dissipation of 1W and a low Vce saturation of 1V at 100µA/100mA. Packaged in a PG-SOT89 (TO-243AA) for surface mounting, it operates reliably up to 150°C junction temperature. This device is suitable for use in power management, industrial control, and lighting applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition200MHz
Supplier Device PackagePG-SOT89
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

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