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BCV29H6327XTSA1

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BCV29H6327XTSA1

TRANS NPN DARL 30V 0.5A SOT89

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BCV29H6327XTSA1 is an NPN Darlington bipolar junction transistor designed for demanding applications. This component offers a 30V collector-emitter breakdown voltage and a maximum collector current of 500mA. It features a high DC current gain of 20000 minimum at 100mA collector current and 5V collector-emitter voltage. The transition frequency is 150MHz, and it has a maximum power dissipation of 1W. The BCV29H6327XTSA1 is housed in a PG-SOT89 package, suitable for surface mount configurations. It operates within a temperature range of -55°C to 150°C (TJ). Qualified to AEC-Q101 standards and designated as Automotive grade, this transistor is well-suited for automotive control systems, industrial automation, and general-purpose switching applications where reliable performance and high gain are critical. The saturation voltage (Vce Sat) is a maximum of 1V at 100µA base current and 100mA collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA, 5V
Frequency - Transition150MHz
Supplier Device PackagePG-SOT89
GradeAutomotive
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max1 W
QualificationAEC-Q101

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