BCV29E6327HTSA1
TRANS NPN DARL 30V 0.5A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCV29E6327HTSA1 is an NPN Darlington bipolar junction transistor designed for high gain applications. This device features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 500mA. With a minimum DC current gain (hFE) of 20000 at 100mA and 5V, it is suitable for amplification and switching circuits requiring significant current gain. The transition frequency is rated at 150MHz, and the maximum power dissipation is 1W. The transistor operates at junction temperatures up to 150°C and is supplied in a PG-SOT89 package for surface mounting, presented on a tape and reel. Applications include general-purpose amplification and switching in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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