BCP6925E6327HTSA1
TRANS PNP 20V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP6925E6327HTSA1 is a PNP bipolar junction transistor designed for high-efficiency applications. This device features a 20V collector-emitter breakdown voltage and a continuous collector current rating of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 3W, it is suitable for various power switching and amplification tasks. The DC current gain (hFE) is a minimum of 160 at 500mA collector current and 1V collector-emitter voltage. Saturation voltage is specified at a maximum of 500mV at 100mA base current and 1A collector current. The transistor operates at temperatures up to 150°C (TJ) and is housed in a PG-SOT223-4 package, provided on tape and reel. This component finds application in power management circuits within automotive and industrial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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