BCP5616E6327HTSA1
TRANS NPN 80V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP5616E6327HTSA1 is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A. With a transition frequency of 100MHz and a power dissipation capability of 2W, it is suitable for use in applications requiring moderate power handling and switching speeds. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV at 50mA base current and 500mA collector current. Packaged in a PG-SOT223-4-10, this device is supplied on tape and reel. This transistor is commonly utilized in general-purpose amplification and switching circuits within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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