BCP5610E6327HTSA1
TRANS NPN 80V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor, part number BCP5610E6327HTSA1. This device features a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 1 A. It offers a minimum DC current gain (hFE) of 63 at 150 mA and 2 V, with a transition frequency of 100 MHz. The maximum power dissipation is 2 W. The transistor operates at temperatures up to 150°C (TJ). It is supplied in a PG-SOT223-4-10 package, suitable for surface mounting, and is provided on tape and reel. Applications for this component include general-purpose amplification and switching in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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