BCP55H6327XTSA1
TRANS NPN 60V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP55H6327XTSA1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications across various industries including automotive, industrial, and consumer electronics. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. With a transition frequency of 100MHz and a power dissipation capability of 2W, it offers robust performance. DC current gain (hFE) is a minimum of 40 at 150mA and 2V. The device exhibits a Vce saturation of 500mV at 50mA and 500mA. It is supplied in a PG-SOT223-4-10 surface-mount package and is available on tape and reel. Operating temperature ranges up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |
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