BCP55E6327HTSA1
TRANS NPN 60V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP55E6327HTSA1 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface mount device, housed in a PG-SOT223-4-10 package, features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 1A. With a transition frequency of 100MHz and a power dissipation of 2W, it is well-suited for signal amplification and switching circuits. The minimum DC current gain (hFE) is 40 at 150mA and 2V. It offers a Vce(sat) of 500mV at 50mA and 500mA, with a collector cutoff current (ICBO) of 100nA. Operating temperature range extends to 150°C (TJ). This component finds application in automotive, industrial, and consumer electronics. Supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |