BCP54E6327HTSA1
TRANS NPN 45V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor, part number BCP54E6327HTSA1, is designed for general-purpose switching and amplification applications. This device features a maximum collector-emitter voltage (Vceo) of 45 V and a continuous collector current (Ic) capability of 1 A. With a transition frequency (fT) of 100 MHz, it offers efficient operation in various RF and high-speed switching circuits. The transistor dissipates a maximum power of 2 W and operates reliably across an extended temperature range up to 150°C (TJ). It is supplied in a PG-SOT223-4 surface-mount package, presented on tape and reel (TR). Key parameters include a minimum DC current gain (hFE) of 40 at 150 mA and 2 V, and a saturation voltage (Vce(sat)) of 500 mV at 50 mA and 500 mA. This component finds application in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 2 W |
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