BCP5416E6433HTMA1
TRANS NPN 45V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP5416E6433HTMA1 is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This device features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 1A, with a maximum collector cutoff current of 100nA. The transistor offers a minimum DC current gain (hFE) of 100 at 150mA collector current and 2V collector-emitter voltage, and a transition frequency of 100MHz. Power dissipation is rated at 2W, with a maximum junction operating temperature of 150°C. The component is housed in a PG-SOT223-4 package, suitable for surface mounting and supplied on tape and reel. The BCP5416E6433HTMA1 finds utility in various industrial and consumer electronics, including power management, audio amplification, and control circuits. Collector-emitter saturation voltage at 500mA collector current and 50mA base current is 500mV.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 2 W |