BCP5316E6433HTMA1
TRANS PNP 80V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP5316E6433HTMA1 is a PNP bipolar junction transistor designed for robust performance in demanding applications. This component features a maximum collector current (Ic) of 1 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a transition frequency (fT) of 125 MHz and a maximum power dissipation of 2 W, it is suitable for signal amplification and switching functions. The device exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 2 V, and a Vce(sat) of 500 mV at 50 mA and 500 mA. Housed in a PG-SOT223-4 package (TO-261-4, TO-261AA), it is supplied on tape and reel and operates within a temperature range of 150°C. This transistor finds application in industrial automation, automotive electronics, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |