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BCP5310E6327HTSA1

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BCP5310E6327HTSA1

TRANS PNP 80V 1A SOT223-4

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BCP5310E6327HTSA1 is a PNP bipolar junction transistor designed for robust performance in demanding applications. This device features a collector-emitter breakdown voltage rating of 80V and a continuous collector current capability of 1A, with a maximum power dissipation of 2W. The transistor exhibits a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a transition frequency of 125MHz. It is packaged in a PG-SOT223-4-10 (TO-261-4, TO-261AA) for surface mounting and is supplied on tape and reel. Key parameters include a Vce(sat) of 500mV at 50mA/500mA and a collector cutoff current (ICBO) of 100nA. This component is suitable for use in industrial and automotive sectors requiring reliable switching and amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Frequency - Transition125MHz
Supplier Device PackagePG-SOT223-4-10
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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