BCP5310E6327HTSA1
TRANS PNP 80V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP5310E6327HTSA1 is a PNP bipolar junction transistor designed for robust performance in demanding applications. This device features a collector-emitter breakdown voltage rating of 80V and a continuous collector current capability of 1A, with a maximum power dissipation of 2W. The transistor exhibits a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a transition frequency of 125MHz. It is packaged in a PG-SOT223-4-10 (TO-261-4, TO-261AA) for surface mounting and is supplied on tape and reel. Key parameters include a Vce(sat) of 500mV at 50mA/500mA and a collector cutoff current (ICBO) of 100nA. This component is suitable for use in industrial and automotive sectors requiring reliable switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |