BCP5216E6327HTSA1
TRANS PNP 60V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP5216E6327HTSA1 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 60 V and a continuous collector current capability of 1 A. It features a transition frequency of 125 MHz, suitable for moderate-speed signal processing. The device is housed in a PG-SOT223-4-10 package, a surface-mount form factor that facilitates automated assembly. Key electrical characteristics include a maximum power dissipation of 2 W and a minimum DC current gain (hFE) of 100 at 150 mA and 2 V. The saturation voltage (Vce(sat)) is specified at a maximum of 500 mV with a base current of 50 mA and collector current of 500 mA. The operating junction temperature range extends to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |
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