BCP5116E6327HTSA1
TRANS PNP 45V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP5116E6327HTSA1. This PNP bipolar transistor offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 1A. Featuring a transition frequency of 125MHz, it supports efficient signal amplification. The device exhibits a maximum power dissipation of 2W and operates at junction temperatures up to 150°C. With a minimum DC current gain (hFE) of 100 at 150mA and 2V, and a saturation voltage of 500mV at 50mA/500mA, it is suitable for demanding applications. Packaged in a PG-SOT223-4 (TO-261-4, TO-261AA) surface-mount configuration and supplied on tape and reel, this component is utilized across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 2 W |
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