BCP49H6419XTMA1
TRANS NPN DARL 60V 0.5A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP49H6419XTMA1 is a high-gain NPN Darlington bipolar junction transistor. This component offers a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 500mA. It features a high DC current gain (hFE) of 10000 at 100mA, 5V, and a transition frequency of 200MHz. The BCP49H6419XTMA1 has a maximum power dissipation of 1.5W and operates within a temperature range of -55°C to 150°C. It is supplied in the PG-SOT223-4 package, designed for surface mounting. Applications for this device include general-purpose amplification and switching, commonly found in consumer electronics and industrial control systems. The collector cutoff current is specified at 100nA (ICBO).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.5 W |
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