BCP49H6359XTMA1
TRANS NPN DARL 60V 0.5A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP49H6359XTMA1 is an NPN Darlington bipolar transistor designed for demanding applications. This device features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 500mA. With a high DC current gain (hFE) of 10000 minimum at 100mA and 5V, it offers significant amplification capabilities. The transition frequency is rated at 200MHz, suitable for moderate frequency switching and amplification tasks. The transistor can dissipate up to 1.5W of power and operates at junction temperatures up to 150°C. It is housed in a PG-SOT223-4 package, a TO-261-4 equivalent, for surface mounting. This component is commonly found in industrial control, power management, and general purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.5 W |
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