BCP49H6327XTSA1
TRANS NPN DARL 60V 0.5A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP49H6327XTSA1 is a NPN Darlington bipolar transistor designed for demanding applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 500mA. With a high DC current gain (hFE) of 10000 minimum at 100mA and 5V, it provides significant amplification. The transition frequency is 200MHz, and it can dissipate up to 1.5W of power. The device features a low Vce saturation of 1V at 100µA collector current, ensuring efficient operation. Packaged in a PG-SOT223-4-10 (TO-261-4, TO-261AA) for surface mounting, this transistor is suitable for use in industrial and automotive sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.5 W |
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