BCP49E6327HTSA1
TRANS NPN DARL 60V 0.5A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP49E6327HTSA1 is an NPN Darlington bipolar junction transistor designed for robust performance in demanding applications. This component offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 500mA, with a maximum power dissipation of 1.5W. Its high DC current gain, specified at a minimum of 10000 at 100mA and 5V, facilitates efficient amplification and switching. The transition frequency reaches 200MHz, enabling operation in higher frequency designs. Packaged in a PG-SOT223-4 (TO-261-4, TO-261AA) surface-mount package, it is supplied on tape and reel. The BCP49E6327HTSA1 finds utility in industrial automation, power management, and general-purpose amplification circuits where high gain and moderate voltage/current handling are required. Operating temperature range is up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.5 W |