BCP 68-25 H6327
TRANS NPN 20V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN bipolar transistor, part number BCP-68-25-H6327. This device features a collector-emitter breakdown voltage of 20 V and a maximum collector current of 1 A. The transition frequency is 100 MHz with a maximum power dissipation of 3 W. Key parameters include a minimum DC current gain (hFE) of 160 at 500mA and 1V, and a Vce saturation of 500mV maximum at 100mA and 1A. The collector cutoff current (ICBO) is rated at 100 nA. This component is supplied in the PG-SOT223-4 package, suitable for surface mounting. Operating junction temperature is specified up to 150°C. This transistor is commonly utilized in industrial and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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