BCP 68-25 E6327
TRANS NPN 20V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP-68-25-E6327 is an NPN bipolar junction transistor (BJT) designed for surface mounting in a PG-SOT223-4 package. This component offers a collector-emitter breakdown voltage of 20 V and a continuous collector current capability of 1 A. It features a maximum power dissipation of 3 W and a transition frequency of 100 MHz. The transistor exhibits a minimum DC current gain (hFE) of 160 at 500 mA and 1 V. Saturation voltage (Vce Sat) is specified at a maximum of 500 mV at 100 mA collector current and 100 mA base current. Collector cutoff current (ICBO) is a maximum of 100 nA. This device is suitable for applications in consumer electronics and industrial control systems, operating at temperatures up to 150°C (TJ). It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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