BCP 56-10 H6433
TRANS NPN 80V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor, part number BCP-56-10-H6433. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. Operating at a transition frequency of 100MHz, it offers a DC current gain (hFE) of a minimum of 63 at 150mA and 2V. The maximum power dissipation is 2W. This NPN transistor is packaged in a PG-SOT223-4 surface mount configuration, suitable for applications requiring compact solutions. Key parameters include a saturation voltage of 500mV at 50mA/500mA (Vce(sat)) and a collector cutoff current of 100nA (ICBO). Its operating temperature range extends to 150°C (TJ). This component finds use in various industrial and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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