BCP 56-10 E6433
TRANS NPN 80V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP-56-10-E6433 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V. With a transition frequency of 100MHz, it offers robust performance for switching and amplification tasks. The device is rated for a maximum power dissipation of 2W and operates at temperatures up to 150°C. Packaged in PG-SOT223-4 (TO-261-4), this transistor is supplied on tape and reel. It finds application in industrial equipment, automotive systems, and power management circuits. Key parameters include a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a saturation voltage (Vce Sat) of 500mV at 50mA and 500mA. The collector cutoff current (ICBO) is a maximum of 100nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |