BCP 54-16 H6779
TRANS NPN 45V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCP-54-16-H6779 is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 1A. The transition frequency is specified at 100MHz, with a minimum DC current gain (hFE) of 100 at 150mA and 2V. Power dissipation is rated at 2W, and the device can operate at junction temperatures up to 150°C. The voltage at saturation (Vce Sat) is a maximum of 500mV at 50mA base current and 500mA collector current. The transistor is housed in a PG-SOT223-4 package, supplied on tape and reel. This component is commonly utilized in industrial control, power management, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 2 W |