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BC860CWE6327HTSA1

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BC860CWE6327HTSA1

TRANS PNP 45V 0.1A SOT-323

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BC860CWE6327HTSA1 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 250mW, it is suitable for general-purpose switching and amplification in consumer electronics and industrial control systems. The device exhibits a minimum DC current gain (hFE) of 420 at 2mA, 5V, and a Vce(sat) of 650mV at 5mA, 100mA. Packaged in a PG-SOT323 (SC-70) for tape and reel distribution, it operates within a temperature range of 150°C. The collector cutoff current (ICBO) is a maximum of 15nA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT323
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max250 mW

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