BC860CB5003XT
TRANS PNP 45V 0.1A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC860CB5003XT is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA. The transistor exhibits a typical DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage, with a transition frequency of 250MHz. Its maximum power dissipation is rated at 330mW, and it operates within a temperature range of -55°C to 150°C. The device is supplied in a PG-SOT23 package, presented on tape and reel. Applications for this transistor include general-purpose switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 330 mW |
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