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BC858BWH6327XTSA1

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BC858BWH6327XTSA1

TRANS PNP 30V 0.1A SOT323

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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Infineon Technologies BC858BWH6327XTSA1 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a 30V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 250mW, it is suitable for operation up to 150°C. The BC858BWH6327XTSA1 utilizes the PG-SOT323 package, also known as SC-70, for surface mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 220 at 2mA/5V and a low collector cutoff current of 15nA (ICBO). Its Vce(sat) is specified at 650mV maximum for 5mA base current and 100mA collector current. This component is commonly found in consumer electronics, industrial controls, and telecommunications equipment. The part is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT323
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max250 mW

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