BC858BWE6327HTSA1
TRANS PNP 30V 0.1A SOT-323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC858BWE6327HTSA1 is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA. With a power dissipation of 250mW and a transition frequency of 250MHz, it is suitable for general-purpose amplification and switching in consumer electronics, industrial control, and automotive applications. The device offers a minimum DC current gain (hFE) of 220 at 2mA collector current and 5V collector-emitter voltage. Its saturation voltage (Vce Sat) is a maximum of 650mV at 5mA base current and 100mA collector current. The transistor operates at temperatures up to 150°C (TJ) and is supplied in a PG-SOT323 package on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 250 mW |