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BC858BL3E6327

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BC858BL3E6327

TRANS PNP 30V 0.1A SOT23

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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Infineon Technologies BC858BL3E6327 is a PNP bipolar junction transistor designed for surface mount applications. This device features a 30V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 250mW, it offers efficient performance in switching and amplification circuits. The transistor exhibits a minimum DC current gain (hFE) of 220 at 2mA collector current and 5V collector-emitter voltage. Off-state characteristics include a maximum collector cutoff current (ICBO) of 15nA. The Vce saturation voltage is rated at a maximum of 650mV at 5mA base current and 100mA collector current. Supplied in a PG-SOT23 package, often referred to as TO-236-3 or SC-59, this component is suitable for use in consumer electronics and industrial automation. It is available on tape and reel for automated assembly processes.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT23
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max250 mW

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