BC857CB5003XT
TRANS PNP 45V 0.1A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC857CB5003XT is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a 45V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 100mA. With a transition frequency of 250MHz and a power dissipation of 330mW, it is suitable for use in consumer electronics and industrial control systems. The transistor exhibits a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage. The Vce(sat) is specified at 650mV maximum for a base current of 5mA driving a collector current of 100mA. The component is supplied in a PG-SOT23 surface-mount package, delivered on tape and reel. The collector cutoff current (ICBO) is a maximum of 15nA. It operates within an ambient temperature range up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 330 mW |
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