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BC857BWE6327BTSA1

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BC857BWE6327BTSA1

TRANS PNP 45V 0.1A SOT323

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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Infineon Technologies PNP Bipolar Junction Transistor, part number BC857BWE6327BTSA1, is a surface mount component in a PG-SOT323 package. This transistor offers a Collector-Emitter Breakdown Voltage of 45V and a maximum Collector Current (Ic) of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 250mW, it is suitable for general-purpose amplification and switching applications. The device exhibits a typical DC Current Gain (hFE) of 220 at 2mA and 5V, and a Vce Saturation of 650mV at 5mA collector and base current. Operating temperature range is up to 150°C. This component is commonly utilized in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT323
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max250 mW

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